FQP4N80
| Part No | FQP4N80 |
|---|---|
| Manufacturer | onsemi |
| Description | MOSFET N-CH 800V 3.9A TO220-3 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
15129
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.6019 | |
| 10 | 1.5699 | |
| 100 | 1.5218 | |
| 1000 | 1.4737 | |
| 10000 | 1.4097 |
Specifications
| Package | Tube |
|---|---|
| Series | QFET® |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 800 V |
| Current-ContinuousDrain(Id)@25°C | 3.9A (Tc) |
| DriveVoltage(MaxRdsOn | 10V |
| MinRdsOn) | 3.6Ohm @ 1.95A, 10V |
| RdsOn(Max)@Id | 5V @ 250µA |
| Vgs | 25 nC @ 10 V |
| Vgs(th)(Max)@Id | ±30V |
| Vgs(Max) | 880 pF @ 25 V |
| InputCapacitance(Ciss)(Max)@Vds | - |
| FETFeature | 130W (Tc) |
| PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
| OperatingTemperature | Through Hole |
| MountingType | TO-220-3 |
| SupplierDevicePackage | TO-220-3 |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| Qualification |
