2SK536-TB-E
| Part No | 2SK536-TB-E |
|---|---|
| Manufacturer | Sanyo |
| Description | N-CHANNEL ENHANCEMENT MOS SILICO |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Specifications
| Package | Bulk |
|---|---|
| Series | - |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 50 V |
| Current-ContinuousDrain(Id)@25°C | 100mA (Ta) |
| DriveVoltage(MaxRdsOn | 10V |
| MinRdsOn) | 20Ohm @ 10mA, 10V |
| RdsOn(Max)@Id | - |
| Vgs | - |
| Vgs(th)(Max)@Id | ±12V |
| Vgs(Max) | 15 pF @ 10 V |
| InputCapacitance(Ciss)(Max)@Vds | - |
| FETFeature | 200mW (Ta) |
| PowerDissipation(Max) | 125°C (TJ) |
| OperatingTemperature | Surface Mount |
| MountingType | 3-CP |
| SupplierDevicePackage | TO-236-3, SC-59, SOT-23-3 |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| Qualification |
