IXTY1R6N50D2
| Part No | IXTY1R6N50D2 |
|---|---|
| Manufacturer | IXYS |
| Description | MOSFET N-CH 500V 1.6A TO252 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
12719
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.5754 | |
| 10 | 3.5039 | |
| 100 | 3.3966 | |
| 1000 | 3.2894 | |
| 10000 | 3.1464 |
Specifications
| Package | Tube |
|---|---|
| Series | Depletion |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 500 V |
| Current-ContinuousDrain(Id)@25°C | 1.6A (Tc) |
| DriveVoltage(MaxRdsOn | - |
| MinRdsOn) | 2.3Ohm @ 800mA, 0V |
| RdsOn(Max)@Id | - |
| Vgs | 23.7 nC @ 5 V |
| Vgs(th)(Max)@Id | ±20V |
| Vgs(Max) | 645 pF @ 25 V |
| InputCapacitance(Ciss)(Max)@Vds | Depletion Mode |
| FETFeature | 100W (Tc) |
| PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
| OperatingTemperature | Surface Mount |
| MountingType | TO-252AA |
| SupplierDevicePackage | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| Qualification |
