IXTQ170N10P
| Part No | IXTQ170N10P |
|---|---|
| Manufacturer | IXYS |
| Description | MOSFET N-CH 100V 170A TO3P |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
14627
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 9.592 | |
| 10 | 9.4002 | |
| 100 | 9.1124 | |
| 1000 | 8.8246 | |
| 10000 | 8.441 |
Specifications
| Package | Tube |
|---|---|
| Series | Polar |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 170A (Tc) |
| DriveVoltage(MaxRdsOn | 10V |
| MinRdsOn) | 9mOhm @ 500mA, 10V |
| RdsOn(Max)@Id | 5V @ 250µA |
| Vgs | ±20V |
| Vgs(th)(Max)@Id | 6000 pF @ 25 V |
| Vgs(Max) | - |
| InputCapacitance(Ciss)(Max)@Vds | 715W (Tc) |
| FETFeature | -55°C ~ 175°C (TJ) |
| PowerDissipation(Max) | Through Hole |
| OperatingTemperature | TO-3P |
| MountingType | TO-3P-3, SC-65-3 |
| SupplierDevicePackage | 198 nC @ 10 V |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| Qualification |
