SIS862DN-T1-GE3
| Part No |
SIS862DN-T1-GE3 |
| Manufacturer |
Vishay
|
| Description |
MOSFET N-CH 60V 40A 1212 |
| Datasheet |
Download Datasheet
|
| ECAD Module |
|
| Quantity |
UNIT PRICE |
EXT PRICE |
| 1 |
1.1536 |
|
| 10 |
1.1305 |
|
| 100 |
1.0959 |
|
| 1000 |
1.0613 |
|
| 10000 |
1.0152 |
|
Specifications
| RoHS | Compliant |
|---|
| Mount | Surface Mount |
|---|
| Height | 1.12 mm |
|---|
| Fall Time | 5 ns |
|---|
| Lead Free | Lead Free |
|---|
| Rise Time | 5 ns |
|---|
| REACH SVHC | Unknown |
|---|
| Rds On Max | 8.5 mΩ |
|---|
| Schedule B | 8541290080 |
|---|
| Number of Pins | 8 |
|---|
| Input Capacitance | 1.32 nF |
|---|
| Power Dissipation | 52 W |
|---|
| Threshold Voltage | 2.6 V |
|---|
| Number of Channels | 1 |
|---|
| Turn-On Delay Time | 12 ns |
|---|
| Radiation Hardening | No |
|---|
| Turn-Off Delay Time | 15 ns |
|---|
| Element Configuration | Single |
|---|
| Max Power Dissipation | 52 W |
|---|
| Max Operating Temperature | 150 °C |
|---|
| Min Operating Temperature | -55 °C |
|---|
| Drain to Source Resistance | 7 mΩ |
|---|
| Gate to Source Voltage (Vgs) | 20 V |
|---|
| Continuous Drain Current (ID) | 40 A |
|---|
| Max Junction Temperature (Tj) | 150 °C |
|---|
| Drain to Source Voltage (Vdss) | 60 V |
|---|
| Drain to Source Breakdown Voltage | 60 V |
|---|
