| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
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| Vgs (Max) | ±30V |
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| Technology | MOSFET (Metal Oxide) |
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| Series | - |
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| Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 4.5A, 10V |
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| Power Dissipation (Max) | 28W (Tc) |
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| Packaging | Tube |
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| Package / Case | TO-262-3 Full Pack, I²Pak |
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| Operating Temperature | -55°C ~ 150°C (TJ) |
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| Mounting Type | Through Hole |
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| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
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| Manufacturer Standard Lead Time | 26 Weeks |
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| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
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| Input Capacitance (Ciss) (Max) @ Vds | 1630pF @ 25V |
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| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
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| FET Type | N-Channel |
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| FET Feature | - |
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| Drive Voltage (Max Rds On, Min Rds On) | 10V |
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| Drain to Source Voltage (Vdss) | 700V |
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| Detailed Description | N-Channel 700V 9A (Tc) 28W (Tc) Through Hole |
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| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
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